Samsung has figured out a way to stack DRAM modules on top of each other, which should eventually lead to—you guessed it—faster and more efficient memory. Separately, it’ll also permit Samsung to create 4GM RAM modules, which is a first. The new technique is called wafer-level-processed stacked package, or WSP, which essentially lets Samsung snap memory modules onto each other without leaving a space in between. RAM produced in this manner can reach speeds of up to 1.6 gigabits per second.
There’s nothing quite like a “better, faster” RAM story to lighten up these Mondays.
Press Release [Samsung via MacNN]
please make sure your nomenclature is correct in order to avoid confusion and mis-information.
A “DRAM Module” is a DIMM, like you put directly into your computer. Samsung is NOT stacking modules, or “snapping memory modules onto each other”, as you put it. They are stacking individual 512mb DDR2 dies, which are in turn encapsulated into a package, or an MCP – multi-chip package. The MCPs are then placed on a Module to create a DIMM/SO-DIMM/etc. Try to use the terminology used in the press release instead of substituting your own.